5NBND. HGT1S5NBNDS. TOAB. 5NBND. NOTE: When ordering , use the entire part number. Add the suffix 9A to obtain the TOAB variant in. 5NBND Datasheet: 21A, V, NPT Series N-Channel IGBTs with Anti- Parallel Hyperfast Diodes, 5NBND PDF Download Fairchild Semiconductor, . mosfet 5Nbnd datasheet, cross reference, circuit and application notes in pdf format.

Author: Tegal Dular
Country: Spain
Language: English (Spanish)
Genre: Literature
Published (Last): 2 July 2008
Pages: 337
PDF File Size: 7.68 Mb
ePub File Size: 7.89 Mb
ISBN: 750-2-35436-424-5
Downloads: 16548
Price: Free* [*Free Regsitration Required]
Uploader: Dairg

Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date.

G5N120BND Datasheet PDF

Tips of soldering irons should be grounded. Exceeding the rated VGE can result in satasheet damage to the oxide layer in the gate region. Circuits that leave the gate opencircuited or floating should be avoided. Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application. The sum of device switching and conduction losses must not exceed PD.

When ordering, use the entire 5n120bnr number. Pulse width limited by maximum junction temperature. If gate protection is required an external Zener is recommended.

5NBND Datasheet PDF – Intersil

Devices should never be inserted into or removed from circuits with power on. A critical component is any component of a life 1. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Specifications may change in any manner without notice. This test method produces the true total Turn-Off Energy Loss. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter.

All tail losses are included in the calculation for EOFF ; i. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

When devices are removed by hand from their carriers, the hand being used should 5n120bnr grounded by any suitable means – for example, with a metallic wristband.

Other definitions are possible. Life support devices or systems are devices or support device or system whose failure to perform can systems which, datssheet are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or b support or sustain life, or datashert whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness.


5n120bd conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.

mosfet 5Nbnd datasheet & applicatoin notes – Datasheet Archive

The datasheet is printed for reference information only. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by 5n120nbd semiconductor.

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Other typical frequency vs collector current ICE plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and IGBTs can be handled safely if the following basic precautions are taken: Gate Termination – The gates of these devices are essentially capacitors.

Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.